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InSb Hall Element HW-302B *High-sensitivity InSb Hall element. *Thin SIP package. *Shipped in bulk (500pcs per pack). Note : It is requested to read and accept "IMPORTANT NOTICE". Please be aware that AKE products are not intended for use in life support equipment, devices, or systems. Use of AKE products in such applications requires the advance written approval of the appropriate AKE officer. Certain applications using semiconductor devices may involve potential risks of personal injury, property damage, or loss of life. In order to minimize these risks, adequate design and operating safeguards should be provided by the customer to minimize inherent or procedural hazards. Inclusion of AKE products in such applications is understood to be fully at the risk of the customer using AKE devices or systems. *Absolute Maximum Ratings Item Symbol Limit Unit Max. Input Current Ic Const. Current Drive 20 mA Operating Temp. Range Topr. -40 to +110 C Storage Temp. Range Tstg. -40 to +125 C *Classification of Output Hall Voltage (VH) Rank VH [ mV ] Conditions *Electrical Characteristics(Ta=25C) Item Symbol Conditions Min. Typ. Max. Unit A 122 to 150 B=50mT, Vc=IV Constant Voltage Drive Output Hall Voltage VH Const. Voltage Drive B=50mT, Vc=IV B=0mT, Ic=0.1mA B=0mT, Ic=0.1mA B=0mT, Vc=IV B 122 204 mV C 144 to 174 168 to 204 Input Resistance Output Resistance Offset Voltage Rin Rout Vos 240 240 -7 550 550 *Input Current Derating Curve +7 mV 20 Temp. Coefficient of VH VH B=50mT, Ic=5mA -1.8 %/C Input Current(mA) Input Resistance Rin : 240 to 550 Temp. Coefficient of Rin Rin B=0mT, Ic=0.1mA -1.8 %/C 10 Dielectric Strength 100V D.C 1.0 M Notes : 1. VH = VHM - Vos (VHM:meter indication) 1 -V 2. VH = VH (T1) X VH (T3) - T H) (T2) X 100 (T3 2 1 Rin (T3) - Rin (T2) X 100 3. Rin = Rin (T1) X (T - T ) 3 2 T1 = 20C, T2 = 0C, T3 = 40C 0 - 40 - 20 0 20 40 60 80 100 120 Ambient Temperature.(C) 0 *Dimensional Drawing (mm) 2.70.1 0.95 -0.1 Note : Rin of Hall element decreases rapidly as ambient temperature increases. Ensure compliance with input current derating curve envelope, throughout the operating temperature range. 0.9 5 2.350.1 0.25 N *Input Voltage Derating Curve 2.0 Input Voltage(V) 0.38 0.2 1.45 Input Resistance Rin : 240 to 550 1.0 0.5 0.57 8.01.0 0.8 5 0.4 0.3 1.0 1 1.0 2 1.0 10 3 1.0 4 Pinning Input Output 1() 2() 3 4 () () 0 - 40 - 20 0 20 40 60 80 100 120 Ambient Temperature.(C) Note : For constant-voltage drive, stay within this input voltage derating curve envelope. 10 27 HW-302B a *Characteristic Curves Rin-T 1400 1200 Input Resistance:Rin( ) Output Voltage:VH(mV) VH-B 350.0 300.0 250.0 200.0 150.0 100.0 50.0 0.0 0 Vin Ic const Vc const Ic = 5 (mA) Vc = 1 (V) Ta = 25 (C) 1000 800 600 400 200 0 -50 0 50 Ambient Temperature(C) Ic d 10 20 30 40 50 Magnetic Flux Density B (mT) 100 150 VH-T 1000 Ic const Vc const Output Voltage:VH(mV) VH-Vc, VH-Ic 800 Ic const Vc const Output Voltage:VH(mV) 750 Ic 500 Ic = 5 (mA) Vc = 1 (V) B = 50 (mT) 600 B = 50 (mT) Ta = 25 (C) Ic 400 Vin 200 250 Vin 0 -50 0 50 Ambient Temperature(C) 100 150 0 0 5 0.5 10 1.0 Ic (mA) Input Current Vc (V) Input Voltage 15 1.5 20 Ic:(mA) 2.0 Vc:(V) h VOS-T 16.0 14.0 Ic const Vc const Ic = 5 (mA) Vc = 1 (V) B = 0 (mT) VOS-Vc, VOS-Ic 20 18 Offset Voltage:Vos(mV) Ic const Vc const B = 0 (mT) Ta = 25 (C) Offset Voltage:Vos(mV) 12.0 10.0 8.0 6.0 4.0 2.0 0.0 -50.0 Ic 16 14 12 10 8 6 4 2 i Ic Vin Vin 5 0.0 50.0 Ambient Temperature(C) 100.0 150.0 0 0 10 1.0 Ic (mA) Input Current Vc (V) Input Voltage 15 1.5 0.5 20 Ic:(mA) 2.0 Vc:(V) *Magnetic Flux Density 1(mT)=10(G) In This Example : Rin=350( ), Vos=1.9(mV), Vc=1(V) 28 |
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